UT3P01ZG-AE2-R datasheet(3/7 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0.0

0.2

0.4

0.6

0.8

1.0

012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 V

3 V

2 V

4 V

5 V

200

400

600

800

1000

ID - Drain Current (mA)

VGS = 4.5 V

VGS = 10 V

VGS = 5 V

0.0

0.3

0.6

0.9

1.2

1.5

1.8

ID = 500 mA

Qg - Total Gate Charge (nC)

VDS = 30 V

VDS = 48 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

300

600

900

1200

0246

VGS - Gate-to-Source Voltage (V)

TJ = - 55 °C

125 °C

25 °C

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VGS = 0 V

0.0

0.3

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V at 500 mA

VGS = 4.5 V at 25 mA

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UT3P01ZG-AE2-R

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