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HT83072 数据表(PDF) 5 Page - Holtek Semiconductor Inc |
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HT83072 数据表(HTML) 5 Page - Holtek Semiconductor Inc |
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5 / 21 page ![]() HT83048/HT83072 Pad No. X Y Pad No. X Y 1 -982.145 -998.050 9 -135.205 -998.050 2 -876.845 -998.050 10 -31.229 -998.050 3 -766.245 -998.050 11 758.645 -980.400 4 -666.245 -998.050 12 858.645 -980.400 5 -555.645 -998.050 13 958.645 -980.400 6 -455.645 -998.050 14 841.895 -835.550 7 -345.045 -998.050 15 841.895 -714.050 8 -245.045 -998.050 16 841.895 -575.450 Pad Description Pad Name I/O Mask Option Description PA0~PA7 I/O Wake-up, Pull-high or None Bidirectional 8-bit I/O port. Each bit can be configured as a wake-up input by mask option. Software instructions determine the CMOS output or Schmitt trigger input with or without pull-high resistor (mask option). VSS ¾¾ Negative power supply, ground VDD ¾¾ Positive power supply VSSA ¾¾ PWM negative power supply, ground VDDA ¾¾ PWM positive power supply, ground RES I ¾ Schmitt trigger reset input, active low OSC1 ¾ RC OSC1 is connected to an RC network for the internal system clock. PWM1, PWM2 O ¾ PWM output for driving a external transistor or speaker Absolute Maximum Ratings Supply Voltage ..........................VSS+2.4V to VSS+5.2V Storage Temperature ........................... -50°Cto125°C Input Voltage .............................VSS -0.3V to VDD+0.3V Operating Temperature .......................... -20°Cto70°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. D.C. Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 2.4 ¾ 5.2 V ISTB Standby Current 3V No load, system HALT ¾ 1 ¾mA IDD Operating Current 3V No load, fSYS=4MHz ¾ 1.2 1.5 mA IOL I/O Port Sink Current 3V VOL=0.3V 17 ¾¾ mA IOH I/O Port Source Current 3V VOH=2.7V -12 ¾¾ mA IO PWM Source Current 3V VOL=0.3V 121 ¾¾ mA IO PWM Source Current 3V VOH=2.7V -81 ¾¾ mA VIL1 Input Low Voltage (RES)3V ¾¾ 1.5 ¾ V VIH1 Input High Voltage (RES)3V ¾¾ 2.2 ¾ V fSYS System Frequency 3V ROSC=100k W 3.7 4.0 4.5 MHz ROSC=62k W 7.4 8.0 8.6 HT83XXX Rev. 0.10 5 August 25, 2003 Preliminary |
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