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UTM6006L-S08-R 数据表(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名 UTM6006L-S08-R
功能描述  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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制造商  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
网页  http://www.doingter.cn/
标志 DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTM6006L-S08-R 数据表(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
Qg
Tota l Gate Charge
VGS=10V, VDS=30V,
ID=8A
---
38.5
---
nC
Qgs
Ga te-Source Cha rge
---
4.7
---
nC
Qgd
Ga te-Drain “Miller” Charge
---
10.3
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=8A,TJ=25℃
---
---
1.
V
IS
Conti nuous Source Current
---
---
---
8
A
Trr
Reverse Recovery Ti me
---
28
---
Ns
Qrr
Reverse Recovery Cha rge
---
40
---
Nc
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
TJ = 25°C, IF =8A
di/dt = 100A/μs
(Note3)
UTM 6006L-S08-R



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