UTM6006L-S08-R datasheet(1/5 Pages) DOINGTER

部件名	UTM6006L-S08-R

功能描述	N-Channel MOSFET uses advanced trench technology

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制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=8A,RDS(ON)<20mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃

unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃ )

8

A

Drain Current – Continuous (TC=100℃ )

5.6

IDM

Drain Current – Pulsed

1

32

PD

Power Dissipation (TC=25℃ )

2.1

W

Power Dissipation – Derate above 25℃

---

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

60

G

D

S1

S

UTM 6006L-S08-R

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