UTM6006L-S08-R datasheet(4/5 Pages) DOINGTER

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UTM6006L-S08-R 数据表(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

部件名	UTM6006L-S08-R

功能描述	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

制造商	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

网页	http://www.doingter.cn/

标志

4 / 5 page

www.doingter.cn

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ID- Drain Current (A)

Figure 3 Rdson- Drain Current

TJ-Junction Temperature(℃)

Figure 4 Rdson-JunctionTemperature

Qg Gate Charge (nC)

Figure 5 Gate Charge

Vsd Source-Drain Voltage (V)

Figure 6 Source- Drain Diode Forward

Vds Drain-Source Voltage (V)

Figure 7 Capacitance vs Vds

Vds Drain-Source Voltage (V)

Figure 8 Safe Operation Area

UTM 6006L-S08-R

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