VX201700CHM3SLASHP datasheet(2/5 Pages) VISHAY

2 / 5 page

VX20170C

www.vishay.com

Vishay General Semiconductor

Revision: 04-Nov-2020

Document Number: 87172

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 5 ms

Note

(1) Thermal resistance junction-to-case to follow JEDEC® 51-14 transient dual interface test method (TDIM)

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 2.5 A

TJ = 25 °C

VF (1)

0.68

IF = 5 A

0.73

IF = 10 A

0.79

0.84

IF = 2.5 A

TJ = 125 °C

0.52

IF = 5 A

0.58

IF = 10 A

0.65

0.70

Reverse current at rated VR per diode

VR = 136 V

TJ = 25 °C

IR (2)

0.0004

TJ = 125 °C

0.7

VR = 170 V

TJ = 25 °C

0.05

TJ = 125 °C

1.0

Typical junction capacitance

4.0 V, 1 MHz

650

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VX20170C

UNIT

Typical thermal resistance per device

RθJC

(1)

1°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

VX20170C-M3/P

2.03

50/tube

Tube

VX201700CHM3/P (1)

2.03

50/tube

Tube

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