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ADRF5045BCCZN-R7 数据表(PDF) 5 Page - Analog Devices

部件名 ADRF5045BCCZN-R7
功能描述  9 kHz to 30 GHz, Silicon, SP4T Switch
PDF  14 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5045BCCZN-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5045
Rev. A | Page 5 of 14
ABSOLUTE MAXIMUM RATINGS
For recommended operating conditions, see Table 1.
Table 2.
Parameter
Rating
Supply Voltage
Positive
−0.3 V to +3.6 V
Negative
−3.6 V to +0.3 V
Digital Control Inputs1
−0.3 V to VDD + 0.3 V
or 3.3 mA, whichever
occurs first
RFx Input Power2 (f = 500 kHz to 30 GHz,
TCASE = 85°C)
Through Path
25 dBm
Terminated Path
25 dBm
Hot Switching
22 dBm
Temperature
Junction, TJ
135°C
Storage Range
−65°C to +150°C
Reflow (Moisture Sensitivity Level 3
(MSL3) Rating)
260°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
RFC, RF1 to RF4 Pins
1500 V
Other Pins
2000 V
1
Overvoltages at digital control inputs are clamped by internal diodes.
Current must be limited to the maximum rating given.
2
For power derating less than 500 kHz, see Figure 2 and Figure 3.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Only one absolute maximum rating can be applied at any one time.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type
θJC
Unit
CC-24-4
Through Path
400
°C/W
Terminated Path
160
°C/W
POWER DERATING CURVES
4
–14
–12
–10
–8
–6
–4
–2
0
2
10k
100k
1M
10M
100M
1G
10G
100G
FREQUENCY (Hz)
Figure 2. Power Derating for Through Path and Hot Switching vs. Frequency,
TCASE = 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
10k
100k
1M
10M
100M
1G
10G
100G
FREQUENCY (Hz)
Figure 3. Power Derating for Terminated Path vs. Frequency, TCASE = 85°C
ESD CAUTION



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