ADMV1009

Data Sheet

Rev. B | Page 18 of 23

THEORY OF OPERATION

The ADMV1009 is a GaAs, MMIC, SSB, upper side band

upconverter in a RoHS compliant package optimized for upper

sideband point to point microwave radio applications operating

in the 12.7 GHz to 15.4 GHz output frequency range. The

ADMV1009 supports LO input frequencies of 9 GHz to 12.6 GHz

and IF frequencies of 2.8 GHz to 4 GHz.

The ADMV1009 uses a RF amplifier preceded by a passive,

double balanced mixer, where a driver amplifier drives the

LO (see Figure 59). The combination of design, process, and

packaging technology allows the functions of these subsystems

to be integrated into a single die, using mature packaging and

interconnection technologies to provide a high performance,

low cost design with excellent electrical, mechanical, and

thermal properties. In addition, the need for external

components is minimized, optimizing cost and size.

LO DRIVER AMPLIFIER

The LO driver amplifier takes a single LO input and amplifies it

to the desired LO signal level for the mixer to operate optimally.

The LO driver amplifier requires a single dc bias voltage (VDLO)

and a single dc gate bias (VGLO) to operate. Starting at −2 V at

the gate supply (VGLO), the LO amplifier is biased at +5 V

(VDLO). Then, the gate bias (VGLO) is varied until the desired

LO amplifier bias current (IDLO) is achieved. The desired LO

amplifier bias current is 60 mA under the LO input drive of

−4 dBm to +4 dBm. The LO drive range of −4 dBm to +4 dBm

makes it compatible with Analog Devices, Inc., wideband

synthesizer portfolio without the requirement for an external

LO driver amplifier.

MIXER

The mixer has two differential inputs, IF1 and IF2, and an

external 180° balun is required to drive the IF ports differentially.

The ADMV1009 is optimized to work with the Mini-Circuit

NCS1-422+ RF balun. The mixer must be biased at −1.1 V

(VGMIX) to operate.

RF AMPLIFIER

The RF amplifier requires a single dc bias voltage (VDRF) and a

single dc gate bias (VGRF) to operate. Starting at −2 V at the

gate supply (VGRF), the RF amplifier is biased at +5 V (VDRF).

Then, the gate bias (VGRF) is varied until the desired RF amplifier

bias current (IDRF) is achieved. The desired RF amplifier bias

current is 250 mA under small signal conditions.

The ADMV1009 has an internal band-pass filter between the

mixer and the RF driver amplifier that reduces LO leakage and

filters out the lower sideband at the RF output. The balanced

input drive allows exceptional linearity performance compared

to similar single-ended solutions.

The typical application circuit (see Figure 59) shows the necessary

external components on the bias lines to eliminate any undesired

stability problems for the RF amplifier and the LO amplifier.

The ADMV1009 upconverter comes in a compact, thermally

enhanced, 4.9 mm × 4.9 mm, 32-terminal ceramic leadless chip

carrier (LCC) package. The ADMV1009 operates over the

−40°C to +85°C temperature range.