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ADMV1011AEZ-R7 数据表(PDF) 13 Page - Analog Devices

部件名 ADMV1011AEZ-R7
功能描述  17 GHz to 24 GHz, GaAs, MMIC, I/Q Upconverter
PDF  26 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADMV1011AEZ-R7 数据表(HTML) 13 Page - Analog Devices

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Data Sheet
ADMV1011
Rev. A | Page 13 of 26
PERFORMANCE vs. LO POWER
Data specified at VDRF1 and VDRF2 = 5 V, VDLO = 3.5 V, IDRF1 = 220 mA, IDRF2 = 75 mA, TA = 25°C, IF frequency = 3 GHz, and
taken with Mini-Circuits QCN-45+ power splitter/combiner, unless otherwise noted. VCTL2 and VCTL3 = −5 V, unless otherwise noted.
28
26
24
22
20
18
16
14
12
10
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 35. Conversion Gain vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
40
38
36
34
32
30
28
26
24
22
20
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 36. Output IP3 vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
30
28
26
24
22
20
18
16
14
12
10
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 37. Output P1dB vs. LO Power at Various Temperatures,
RF Frequency = 18 GHz, Lower Sideband
30
28
26
24
22
20
18
16
14
12
10
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 38. Conversion Gain vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
40
38
36
34
32
30
28
26
24
22
20
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 39. Output IP3 vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband
30
28
26
24
22
20
18
16
14
12
10
–4
–3
–2
–1
0
1
2
3
4
LO POWER (dBm)
TA = +85°C
TA = +25°C
TA = –40°C
Figure 40. Output P1dB vs. LO Power at Various Temperatures,
RF Frequency = 23 GHz, Upper Sideband



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