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ADMV1011AEZ-R7 数据表(PDF) 18 Page - Analog Devices |
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ADMV1011AEZ-R7 数据表(HTML) 18 Page - Analog Devices |
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18 / 26 page ![]() ADMV1011 Data Sheet Rev. A | Page 18 of 26 THEORY OF OPERATION The ADMV1011 is a GaAs, MMIC, double sideband upconverter in a RoHS compliant package optimized for upper sideband and lower sideband point to point microwave radio applications operating in the 17 GHz to 24 GHz output frequency range. The ADMV1011 supports LO input frequencies of 8 GHz to 12 GHz and IF input frequencies of 2 GHz to 4 GHz. The ADMV1011 uses a variable gain RF amplifier and an I/Q preceded by a double balanced mixer, where a driver amplifier drives the LO (see Figure 1). The combination of design, process, and packaging technology allows the functions of these subsystems to be integrated into a single die, using mature packaging and interconnection technologies to provide a high performance, low cost design with excellent electrical, mechanical, and thermal properties. In addition, the need for external components is minimized, optimizing cost and size. LO DRIVER AMPLIFIER The LO driver amplifier takes a single LO input and doubles the frequency, amplifying it to the desired LO signal level for the mixer to operate optimally. The LO driver amplifier requires a single dc bias voltage (VDLO), which draws about 160 mA at 3.5 V under the LO drive. The LO drive range of −4 dBm to +4 dBm makes it compatible with Analog Devices, Inc., wideband synthesizer portfolio without the requirement for an external LO driver amplifier. MIXER The mixer is an I/Q double balanced mixer and reduces the need for filtering unwanted sideband. An external 90° hybrid is required to select the desired sideband of operation. The ADMV1011 has been optimized to work with the Mini-Circuits QCN-45+ RF 90° hybrid. RF AMPLIFIER The RF amplifier is a variable gain amplifier where the gain can be adjusted by changing the control voltages (VCTL2 and VCTL3). The RF amplifier requires two dc bias voltages (VDRF1 and VDRF2) and two dc gate bias voltages (VGRF1 and VGRF2) to operate. Starting at −1.8 V at the gate supply (VGRF1 and VGRF2), the RF amplifier is biased at 5 V (VDRF1 and VDRF2). Then, the gate bias (VGRF1 and VGRF2) is varied until the desired RF amplifier bias current (IDRF1 and IDRF2) is achieved. The desired RF amplifier bias current is 220 mA for IDRF1 and 75 mA for IDRF2 under small signal conditions. The ADMV1011 has an internal band-pass filter between the mixer and the RF driver amplifier that reduces LO leakage and filters out the lower sideband at the RF output. The balanced input drive allows exceptional linearity performance compared to similar single-ended solutions. The typical application circuit (see Figure 56) shows the necessary external components on the bias lines to eliminate any undesired stability problems for the RF amplifier and the LO amplifier. The ADMV1011 upconverter comes in a compact, thermally enhanced, 4.9 mm × 4.9 mm, 32-terminal ceramic leadless chip carrier (LCC) package. The ADMV1011 operates over the −40°C to +85°C temperature range. |
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