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FUSB3307 数据表(PDF) 8 Page - ON Semiconductor

部件名 FUSB3307
功能描述  USB Power Delivery 3.0 Adaptive Source Charging Controller
PDF  21 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

FUSB3307 数据表(HTML) 8 Page - ON Semiconductor

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Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified.
Parameter
Unit
Max
Typ
Min
Symbol
Test Conditions
CONSTANT VOLTAGE SENSING SECTION
VFB Reference Voltage at 5.0 V
(Power−on reset, default)
VCC = 5.0 V, VCS = 0 V
VCVR−5.0V
0.485
0.500
0.515
V
VFB Reference Voltage at 9 V
VCC = 9 V, VCS = 0 V
VCVR−9V
0.873
0.900
0.927
V
VFB Reference Voltage at 12 V
VCC = 12 V, VCS = 0 V
VCVR−12V
1.164
1.200
1.236
V
VFB Reference Voltage at 15 V
VCC = 15 V, VCS = 0 V
VCVR−15V
1.455
1.500
1.545
V
VFB Reference Voltage at 20 V
VCC = 20 V, VCS = 0 V
VCVR−20V
1.940
2.000
2.060
V
VFB Reference Voltage of 20 mV step
DVCC = 20 mV, VCS = 0 V
VCVR−STEP−20mV
1.940
2.000
2.060
mV
FEEDBACK SECTION
CATH Pin Sink Current (Note 5)
Minimum guaranteed sink current ex-
pected from CATH pin
ICATH−Sink
2
mA
DISCHARGE SECTION
VBUS to GND leakage resistance when
VBUS is not being sourced
GATE = 0 V
RDISC−BUS
72.4
155
kW
VCC Pin Sink Current when discharging
(Note 5)
Discharging current on VCC after a
fault has triggered at VCC = 20 V
IVCC −Sink
170
mA
DISC Pin Sink Current when discharging
(Note 5)
Discharging current on DISC during a
voltage transition at VCC = 20 V,
IOUT < ICS−EN−DSCG
IDISC −Sink
250
mA
Discharge Time (Note 5)
VBUS voltage transition step (VSTEP)
v 0.5 V, Final VBUS > 13 V,
IOUT < ICS−EN−DSCG
tDISC1
7
ms
Discharge Time (Note 5)
VSTEP v 0.5 V, Final VBUS < 13 V,
IOUT < ICS−EN−DSCG
tDISC2
19
ms
Discharge Time (Note 5)
VSTEP > 0.5 V, Final VBUS > 13 V,
IOUT < ICS−EN−DSCG
tDISC3
56
ms
Discharge Time (Note 5)
VSTEP > 0.5 V, Final VBUS < 13 V,
IOUT < ICS−EN−DSCG
tDISC4
221
ms
OVER TEMPERATURE PROTECTION SECTION
Current Source on NTC pin (Note 6)
Resistance to ground on NTC =
3.293 kW
INTC
55
60
65
mA
Debounce time for External Over Tempera-
ture Protection (E_OTP) (Note 6)
tNTC−DEB
90
ms
Internal Die Warning Temperature Thresh-
old (Note 5)
TI_WARN
125
°C
Internal Die Over−Temperature Threshold
(Note 5)
TI_OTP
135
°C
PROTECTION RECOVERY SECTION
VCC Voltage Release Threshold
UVP fault causing release when VCC
< VLATCH
VLATCH
0.9
V
Duration for Disabling Load Switch When
Fault Removed in Normal Mode (Note 5)
After fault OVP, UVP, OCP, E_OTP,
I_OTP or CC_OVP has recovered
t2S_AR_NM
1.8
2
2.2
sec
Duration for Disabling Load Switch When
Fault Removed in Debug Test Mode
t2S_SR_DM
100
ms
INPUTS SECTION
PDIV2, PDIV1 and PDIV0 input LOW volt-
age
Input LOW
VIL
0.4
V
PDIV2, PDIV1 and PDIV0 input HIGH volt-
age
Input HIGH
VIH
VDD − 0.4
V



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