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FUSB3307 数据表(PDF) 8 Page - ON Semiconductor |
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FUSB3307 数据表(HTML) 8 Page - ON Semiconductor |
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8 / 21 page ![]() FUSB3307 www.onsemi.com 8 Table 4. ELECTRICAL CHARACTERISTICS VCC = 5 V, TJ = −40°C to 125°C unless otherwise specified. Parameter Unit Max Typ Min Symbol Test Conditions CONSTANT VOLTAGE SENSING SECTION VFB Reference Voltage at 5.0 V (Power−on reset, default) VCC = 5.0 V, VCS = 0 V VCVR−5.0V 0.485 0.500 0.515 V VFB Reference Voltage at 9 V VCC = 9 V, VCS = 0 V VCVR−9V 0.873 0.900 0.927 V VFB Reference Voltage at 12 V VCC = 12 V, VCS = 0 V VCVR−12V 1.164 1.200 1.236 V VFB Reference Voltage at 15 V VCC = 15 V, VCS = 0 V VCVR−15V 1.455 1.500 1.545 V VFB Reference Voltage at 20 V VCC = 20 V, VCS = 0 V VCVR−20V 1.940 2.000 2.060 V VFB Reference Voltage of 20 mV step DVCC = 20 mV, VCS = 0 V VCVR−STEP−20mV 1.940 2.000 2.060 mV FEEDBACK SECTION CATH Pin Sink Current (Note 5) Minimum guaranteed sink current ex- pected from CATH pin ICATH−Sink 2 mA DISCHARGE SECTION VBUS to GND leakage resistance when VBUS is not being sourced GATE = 0 V RDISC−BUS 72.4 155 kW VCC Pin Sink Current when discharging (Note 5) Discharging current on VCC after a fault has triggered at VCC = 20 V IVCC −Sink 170 mA DISC Pin Sink Current when discharging (Note 5) Discharging current on DISC during a voltage transition at VCC = 20 V, IOUT < ICS−EN−DSCG IDISC −Sink 250 mA Discharge Time (Note 5) VBUS voltage transition step (VSTEP) v 0.5 V, Final VBUS > 13 V, IOUT < ICS−EN−DSCG tDISC1 7 ms Discharge Time (Note 5) VSTEP v 0.5 V, Final VBUS < 13 V, IOUT < ICS−EN−DSCG tDISC2 19 ms Discharge Time (Note 5) VSTEP > 0.5 V, Final VBUS > 13 V, IOUT < ICS−EN−DSCG tDISC3 56 ms Discharge Time (Note 5) VSTEP > 0.5 V, Final VBUS < 13 V, IOUT < ICS−EN−DSCG tDISC4 221 ms OVER TEMPERATURE PROTECTION SECTION Current Source on NTC pin (Note 6) Resistance to ground on NTC = 3.293 kW INTC 55 60 65 mA Debounce time for External Over Tempera- ture Protection (E_OTP) (Note 6) tNTC−DEB 90 ms Internal Die Warning Temperature Thresh- old (Note 5) TI_WARN 125 °C Internal Die Over−Temperature Threshold (Note 5) TI_OTP 135 °C PROTECTION RECOVERY SECTION VCC Voltage Release Threshold UVP fault causing release when VCC < VLATCH VLATCH 0.9 V Duration for Disabling Load Switch When Fault Removed in Normal Mode (Note 5) After fault OVP, UVP, OCP, E_OTP, I_OTP or CC_OVP has recovered t2S_AR_NM 1.8 2 2.2 sec Duration for Disabling Load Switch When Fault Removed in Debug Test Mode t2S_SR_DM 100 ms INPUTS SECTION PDIV2, PDIV1 and PDIV0 input LOW volt- age Input LOW VIL 0.4 V PDIV2, PDIV1 and PDIV0 input HIGH volt- age Input HIGH VIH VDD − 0.4 V |
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