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M28F420 数据表(PDF) 9 Page - STMicroelectronics

部件名 M28F420
功能描述  4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PDF  38 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28F420 数据表(HTML) 9 Page - STMicroelectronics

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background image
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
μA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±10
μA
ICC
(1, 3)
Supply Current (Read Byte-wide) TTL
E = VIL, f = 10MHz, IOUT = 0mA
65
mA
ICC
(1, 3)
Supply Current (Read Word-wide) TTL
E = VIL, f = 10MHz, IOUT = 0mA
70
mA
ICC
(1, 3)
Supply Current (Read Byte-wide) CMOS
E = VSS, f = 10MHz, IOUT = 0mA
60
mA
Supply Current (Read Word-wide)
CMOS
E= VSS, f = 10MHz, IOUT = 0mA
65
mA
ICC1
(3)
Supply Current (Standby) TTL
E = VIH,RP = VIH
3mA
Supply Current (Standby) CMOS
E= VCC
± 0.2V,
RP = VCC
± 0.2V,
BYTE = VCC
± 0.2V or VSS
130
μA
ICC2
(3)
Supply Current (Power Down)
RP = VSS
± 0.2V
80
μA
ICC3
Supply Current (Program Byte-wide)
Byte program in progress
50
mA
Supply Current (Program Word-wide)
Word program in progress
60
mA
ICC4
Supply Current (Erase)
Erase in progress
30
mA
ICC5
(2)
Supply Current (Erase Suspend)
E = VIH, Erase suspended
10
mA
IPP
Program Current (Read or Standby)
VPP >VCC
200
μA
IPP1
Program Leakage Current (Read or
Standby)
VPP
≤ VCC
±10
μA
IPP2
Program Current (Power Down)
RP = VSS
± 0.2V
5
μA
IPP3
Program Current (Program Byte-wide)
Byte program in progress
30
mA
IPP3
Program Current (Program Word-wide)
Word program in progress
40
mA
IPP4
Program Current (Erase)
Erase in progress
30
mA
IPP5
Program Current (Erase Suspend)
Erase suspended
200
μA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 5.8mA
0.45
V
VOH
Output High Voltage
IOH = –2.5mA
2.4
V
VPPL
Program Voltage (Normal operation)
0
6.5
V
VPPH
Program Voltage (Program or Erase
operations)
11.4
12.6
V
VID
A9 Voltage (Electronic Signature)
11.4
13
V
IID
A9 Current (Electronic Signature)
A9 = VID
500
μA
VLKO
Supply Voltage (Erase and Program
lock-out)
2V
VHH
Input Voltage (RP, Boot unlock)
Boot block Program or Erase
11.4
13
V
Notes: 1. Automatic Power Saving reduces ICC to
≤ 8mA typical in static operation.
2. Current increases to ICC +ICC5 during a read operation.
3. CMOS levels VCC
± 0.2V and VSS ± 0.2V. TTL levels VIH and VIL.
Table 12. DC Characteristics
(TA = –40 to 125
°C; VCC =5V±10% or 5V±5% ; VPP = 12V±5%)
9/38
M28F410, M28F420



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