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BAS416V 数据表(PDF) 3 Page - Rectron Semiconductor |
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BAS416V 数据表(HTML) 3 Page - Rectron Semiconductor |
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3 / 7 page ![]() Device mounted on a FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 200 300 0 100 200 100 T ( C) amb o I F (mA) single diode loaded double diode loaded Fig.3 Forward current as a function of forward voltage; per diode. handbook, halfpage 0 1.6 300 0 100 200 0.8 1.2 0.4 I F (mA) V (V) F (1) (2) (3) (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. Based on square wave currents; Tj =25 °C prior to surge. handbook, full pagewidth 10 tp (μs) 1 IFSM (A) 102 10−1 104 102 103 10 1 RATING AND CHARACTERISTICS CURVES (BAS416V) |
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