BAS416V datasheet(2/7 Pages) RECTRON

部件名	BAS416V

功能描述	Low-leakage double diode

PDF	7 Pages

Scroll/Zoom	100%

制造商	RECTRON [Rectron Semiconductor]

网页	http://www.rectron.com

标志

2 / 7 page

ELECTRICAL CHARACTERISTICS Tj = 25

°C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF =1mA

−

900

IF =10mA

−

1000

IF =50mA

−

1100

IF = 150 mA

−

1250

reverse current

see Fig.5

VR = 75 V

0.003

VR = 75 V; Tj = 150

°C

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100

Ω;

measured at IR = 1 mA; see Fig.7

0.8

μs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

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