ACE25AC200GL

2M SPI NOR FLASH

VER 1.2

10

Page Program (PP) (02H)

The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page

Program command.

The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three

address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all

zero, all transmitted data that goes beyond the end of the current page are programmed from the start

address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must

be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes

low sending Page Program command3 -byte address on SI at least 1 byte data on SI

 C S # g

The command sequence is shown in Figure7. If more than 256 bytes are sent to the device, previously

latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within

the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the

requested addresses without having any effects on the other bytes of the same page. CS# must be driven

high after the eighth bit of the last data byte has been latched in; otherwise the Page Program (PP)

command is not executed.

As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated.

While the Page Program cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle,

and is 0 when it is completed. Write Enable Latch (WEL) bit is reset to 0 at the end of the Page Program

Cycle..

Page Program (PP) command applied to a page which is protected by the Block Protect (BP2, BP1, BP0)

bit (see Table1) is not executed.

Figure7. Page Program Sequence Diagram