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FXLS8967AFR3 数据表(PDF) 7 Page - NXP Semiconductors

部件名 FXLS8967AFR3
功能描述  3-Axis Low-g Accelerometer
PDF  98 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

FXLS8967AFR3 数据表(HTML) 7 Page - NXP Semiconductors

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NXP Semiconductors
FXLS8967AF
3-Axis Low-g Accelerometer
Symbol
Rating
Min
Unit
VHBM
Human Body Model
±2000
V
VCDM
Charged Device Model
±500
V
ILU
Latch-up current at T = +105 °C (per AEC-Q100-004)
±100
mA
Table 5. ESD and latch-up-protection characteristics
CAUTION
This device is sensitive to mechanical shock. Improper handling can cause permanent damage to the
part or cause the part to otherwise fail.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent
standards.
8 Recommended operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Supply voltage
1.71
3.0
3.6
V
Top
Operating temperature range
–40
+25
+105
°C
Table 6. Nominal operating conditions
9 Mechanical characteristics
VDD = 1.8 V to 3.0 V, T = –40 °C to 105 °C, unless otherwise noted.
Typical values represent mean or mean ±1 σ values, depending on the specific parameter.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
nACC
Output data width
12
bits
±2 g mode
±2
±4 g mode
±4
±8 g mode
±8
FSR
Full-scale measurement range
±16 g mode
±16
g
Table 7. Accelerometer sensor performance parameters
FXLS8967AF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2021. All rights reserved.
Objective data sheet
Rev. 1 — 27 April 2021
7 / 98



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