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AT45DB321E 数据表(PDF) 48 Page - Dialog Semiconductor |
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AT45DB321E 数据表(HTML) 48 Page - Dialog Semiconductor |
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48 / 70 page ![]() 47 AT45DB321E 8784L–DFLASH–3/2019 17.3 DC Characteristics Notes: 1. Typical values measured at 3.0V at 25°C. 2. I CC2 during a Buffer Read is 20mA maximum @ 20MHz. Symbol Parameter Condition Min Typ Max Units I UDPD Ultra-Deep Power-Down Current CS= V CC. All other inputs at 0V or VCC 0.4 1 µA I DPD Deep Power-Down Current CS= V CC. All other inputs at 0V or VCC 5 12 µA ISB Standby Current CS= VCC. All other inputs at 0V or VCC 25 50 µA I CC1 Active Current, Low Power Read (01h) Operation f = 1MHz; I OUT = 0mA 6 9 mA f = 15MHz; I OUT = 0mA 7 11 mA I CC2 (1)(2) Active Current, Read Operation f = 50MHz; IOUT = 0mA 12 17 mA f = 85MHz; I OUT = 0mA 16 22 mA I CC3 Active Current, Program Operation CS=V CC 12 18 mA I CC4 Active Current, Erase Operation CS=V CC 12 18 mA I LI Input Load Current All inputs at CMOS levels 1 µA ILO Output Leakage Current All inputs at CMOS levels 1 µA V IL Input Low Voltage V CC x 0.3 V V IH Input High Voltage V CC x 0.7 V CC + 0.6 V V OL Output Low Voltage I OL = 100µA 0.4 V VOH Output High Voltage IOH = -100µA VCC - 0.2V V |
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