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SCIMX356BVMB 数据表(PDF) 22 Page - NXP Semiconductors |
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SCIMX356BVMB 数据表(HTML) 22 Page - NXP Semiconductors |
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22 / 147 page ![]() i.MX35 Applications Processors for Automotive Products, Rev. 10 Freescale Semiconductor 22 Table 14 shows the DC electrical characteristics for GPIO, DDR2, mobile DDR, and SDRAM pins. The term NVCC refers to the power supply voltage that feeds the I/O of the module in question. For example, NVCC for the SD/MMC interface refers to NVCC_SDIO. Table 14. I/O Pin DC Electrical Characteristics Pin DC Electrical Characteristics Symbol Test Condition Min. Typ. Max. Unit GPIO High-level output voltage Voh Ioh = –1 mA Ioh = specified drive NVCC – 0.15 0.8 × NVCC —— V Low-level output voltage Vol Iol = 1 mA Iol = specified drive —— 0.15 0.2 × NVCC V High-level output current for slow mode (Voh = 0.8 × NVCC) Ioh Standard drive High drive Max. drive –2.0 –4.0 –8.0 —— mA High-level output current for fast mode (Voh = 0.8 × NVCC) Ioh Standard drive High drive Max. drive –4.0 –6.0 –8.0 —— mA Low-level output current for slow mode (Voh = 0.2 × NVCC) Iol Standard drive High drive Max. drive 2.0 4.0 8.0 —— mA Low-level output current for fast mode (Voh = 0.2 × NVCC) Iol Standard drive High drive Max. drive 4.0 6.0 8.0 —— mA High-level DC Input Voltage with 1.8 V, 3.3 V NVCC (for digital cells in input mode) VIH — 0.7 × NVCC — NVCC V Low-level DC Input Voltage with 1.8 V, 3.3 V NVCC (for digital cells in input mode VIL — –0.3 V — 0.3 × NVCC V Input Hysteresis VHYS OVDD = 3.3 V OVDD = 1.8 V —410 330 —mV Schmitt trigger VT+ VT+ — 0.5 × NVCC — V Schmitt trigger VT– VT– — — — 0.5 × NVCC V Pull-up resistor (22 k Ω PU) Rpu Vi = 0 — 22 — k Ω Pull-up resistor (47 k Ω PU) Rpu Vi = 0 — 47 — k Ω Pull-up resistor (100 k Ω PU) Rpu Vi = 0 — 100 — k Ω Pull-down resistor (100 k Ω PD) Rpd Vi = NVCC — 100 — k Ω External resistance to pull keeper up when enabled Rkpu Ipu > 620 μA @ min Vddio = 3.0 V —— 4.8 k Ω External resistance to pull keeper down when enabled Rkpd Ipu > 510 μA @min Vddio = 3.0 V —— 5.9 k Ω |
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