TL082ACDR datasheet(11/75 Pages) TI

11 / 75 page

6.4 ESD Ratings: All Other Devices

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.5 Recommended Operating Conditions: TL08xH

over operating ambient temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage, (VCC+) – (VCC–)

4.5

Input voltage range

(VCC–) + 2

(VCC+) + 0.1

Specified temperature

–40

125

°C

6.6 Recommended Operating Conditions: All Other Devices

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VCC+

Supply voltage

VCC–

Supply voltage

–5

–15

VCM

Common-mode voltage

VCC– + 4 VCC+ – 4

Ambient temperature

TL08xM

–55

125

°C

TL08xQ

–40

125

TL08xI

–40

TL08xC

6.7 Thermal Information for Single Channel: TL081H

THERMAL METRIC (1)

TL081H

UNIT

(SOIC)

DCK

(SC70)

DBV

(SOT-23)

8 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

158.8

217.5

212.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

98.6

113.1

111.1

°C/W

RθJB

Junction-to-board thermal resistance

102.3

63.8

79.4

°C/W

ψJT

Junction-to-top characterization parameter

45.8

34.8

51.8

°C/W

ψJB

Junction-to-board characterization parameter

101.5

63.5

79.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.8 Thermal Information for Dual Channel: TL082H

THERMAL METRIC (1)

TL082H

UNIT

(SOIC)

DDF

(SOT-23)

(TSSOP)

8 PINS

RθJA

Junction-to-ambient thermal resistance

147.8

181.5

200.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

88.2

112.5

89.4

°C/W

RθJB

Junction-to-board thermal resistance

91.4

98.2

131.0

°C/W

ψJT

Junction-to-top characterization parameter

36.8

17.2

22.0

°C/W

ψJB

Junction-to-board characterization parameter

90.6

97.6

129.3

°C/W

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TL081, TL081A, TL081B, TL081H

TL082, TL082A, TL082B, TL082H

TL084, TL084A, TL084B, TL084H

SLOS081L – FEBRUARY 1977 – REVISED JULY 2021

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