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FDPC8014AS 数据表(PDF) 4 Page - ON Semiconductor

部件名 FDPC8014AS
功能描述  MOSFET ??Dual, N-Channel, POWERTRENCH, Power Clip, Asymmetric 25 V
PDF  12 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

FDPC8014AS 数据表(HTML) 4 Page - ON Semiconductor

  FDPC8014AS Datasheet HTML 1Page - ON Semiconductor FDPC8014AS Datasheet HTML 2Page - ON Semiconductor FDPC8014AS Datasheet HTML 3Page - ON Semiconductor FDPC8014AS Datasheet HTML 4Page - ON Semiconductor FDPC8014AS Datasheet HTML 5Page - ON Semiconductor FDPC8014AS Datasheet HTML 6Page - ON Semiconductor FDPC8014AS Datasheet HTML 7Page - ON Semiconductor FDPC8014AS Datasheet HTML 8Page - ON Semiconductor FDPC8014AS Datasheet HTML 9Page - ON Semiconductor Next Button
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Symbol
Unit
Max
Typ
Min
Type
Test Condition
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, IS = 20 A (Note 6)
VGS = 0 V, IS = 40 A (Note 6)
Q1
Q2
−
−
0.8
0.8
1.2
1.2
V
IS
Diode Continuous Forward
Current
TC = 25°C
Q1
Q2
−
−
59
159
−
−
A
IS,Pulse
Diode Pulse Current
Q1
Q2
−
−
266
1116
−
−
A
trr
Reverse Recovery Time
Q1: IF = 20 A, di/dt = 100 A/ms
Q2: IF = 40 A, di/dt = 300 A/ms
Q1
Q2
−
−
25
44
40
70
ns
Qrr
Reverse Recovery Charge
Q1
Q2
−
−
10
78
20
125
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted)
0.0
0.2
0.4
0.6
0.8
1.0
0
15
30
45
60
75
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
VGS = 2.5 V
VGS = 10 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4.5 V
015
30
45
60
0
1
2
3
4
5
VGS = 3 V
ID, DRAIN CURRENT (A)
VGS= 3.5 V
VGS = 4.5 V
VGS = 2.5 V
VGS= 10 V
−75 −50 −25
0
25
50
75
100 125
0
15
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 20 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (°C)
14
5
6
0
3
6
9
12
TJ = 125°C
ID = 20 A
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain Current
and Gate Voltage
Figure 3. Normalized On Resistance vs. Junction
Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
75
PULSE DURATION = 80 ms
DUTY CIRCLE = 0.5% MAX
TJ = 25°C
23
8
9
10
7



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