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FDPC8014AS 数据表(PDF) 1 Page - ON Semiconductor |
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FDPC8014AS 数据表(HTML) 1 Page - ON Semiconductor |
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1 / 12 page ![]() © Semiconductor Components Industries, LLC, 2015 December, 2020 − Rev. 2 1 Publication Order Number: FDPC8014AS/D MOSFET – Dual, N-Channel, POWERTRENCH), Power Clip, Asymmetric 25 V FDPC8014AS General Description This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET t (Q2) have been designed to provide optimal power efficiency. Features • Q1: N−Channel ♦ Max rDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A ♦ Max rDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A • Q2: N−Channel ♦ Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 40 A ♦ Max rDS(on) = 1.2 mW at VGS = 4.5 V, ID = 37 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Computing • Communications • General Purpose Point of Load PIN DESCRIPTION Pin Name Description 1 HSG High Side Gate 2 GR Gate Return 3, 4, 9 V+ (HSD) High Side Drain 5, 6, 7 SW Switching Node, Low Side Drain 8 LSG Low Side Gate 10 GND (LSS) Low Side Source www.onsemi.com Power Clip 5x6 PDFN8 5x6, 1.27P, CASE 483AR See detailed ordering and shipping information on page 10 of this data sheet. ORDERING INFORMATION MARKING DIAGRAM Bottom Top N−Channel MOSFET FDPC8014AS = Specific Device Code $Y = ON semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digits Lot Run Traceability Code PIN1 PIN1 PAD10 GND(LSS) PAD9 V+(HSD) $Y&Z&3&K FDPC 8014AS GR GR V+ LSG SW SW SW V+ HSG LSG SW SW SW V+ V+ HSG |
类似零件编号 - FDPC8014AS |
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类似说明 - FDPC8014AS |
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