FDPC8014AS datasheet(5/12 Pages) ONSEMI

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FDPC8014AS

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TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (TJ = 25°C unless otherwise noted) (continued)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs.

Source Current

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs. Drain to Source Voltage

Figure 9. Unclamped Inductive Switching Capability

Figure 10. Maximum Continuous Drain Current vs.

Case Temperature

1.0

1.5

2.0

2.5

3.0

VGS, GATE TO SOURCE VOLTAGE (V)

0.0

0.2

0.4

0.6

0.8

1.0

0.001

0.01

0.1

100

VSD, BODY DIODE FORWARD VOLTAGE (V)

VDS = 5 V

TJ = 150°C

PULSE DURATION = 80 ms

DUTY CIRCLE = 0.5% MAX

TJ = 25°C

TJ = −55°C

VGS = 0 V

TJ = 150°C

TJ = 25°C

TJ = −55°C

Qg, GATE CHARGE (nC)

ID = 20 A

VDD = 13 V

VDD = 10 V

VDD = 15 V

0.1

100

1000

10000

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

f = 1 MHz

VGS = 0 V

0.001

0.01

0.1

TJ = 125°C

tAV, TIME IN AVALANCHE (ms)

TJ = 25°C

TJ = 100°C

100

125

TC, CASE TEMPERATURE (°C)

150

VGS = 4.5 V

VGS = 10 V

RqJC = 6.0°C/W

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