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EDBA164B4PK-1DITF-R 数据表(PDF) 39 Page - Micron Technology

部件名 EDBA164B4PK-1DITF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PK-1DITF-R 数据表(HTML) 39 Page - Micron Technology

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Table 32: MR8 Op-Code Bit Definitions (Continued)
Feature
Type
OP
Definition
Density
Read-only
OP[5:2]
0000b: 64Mb
0001b: 128Mb
0010b: 256Mb
0011b: 512Mb
0100b: 1Gb
0101b: 2Gb
0110b: 4Gb
0111b: 8Gb
1000b: 16Gb
1001b: 32Gb
All others: Reserved
I/O width
Read-only
OP[7:6]
00b: x32
01b: x16
10b: x8
11b: not used
Table 33: MR9 Test Mode (MA[7:0] = 09h)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Vendor-specific test mode
Table 34: MR10 Calibration (MA[7:0] = 0Ah)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
S4
Calibration code
Table 35: MR10 Op-Code Bit Definitions
Notes 1–6 apply to all parameters and conditions
Feature
Type
OP
Definition
Calibration code
Write-only
OP[7:0]
0xFF: Calibration command after initialization
0xAB: Long calibration
0x56: Short calibration
0xC3: ZQRESET
All others: Reserved
Notes:
1. Host processor must not write MR10 with reserved values.
2. The device ignores calibration commands when a reserved value is written into MR10.
3. See AC timing table for the calibration latency.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Mode Register Definition
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
39
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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