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HMC1126ACEZ-R7 数据表(PDF) 19 Page - Analog Devices

部件名 HMC1126ACEZ-R7
功能描述  GaAs, pHEMT, Low Noise Amplifier, 400 MHz to 52 GHz
PDF  21 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

HMC1126ACEZ-R7 数据表(HTML) 19 Page - Analog Devices

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Data Sheet
HMC1126ACEZ
Rev. 0 | Page 19 of 21
CONSTANT DRAIN CURRENT BIASING vs.
CONSTANT GATE VOLTAGE BIASING
Voltage Biasing
The HMC920LP5E uses closed loop feedback to continuously
adjust VGATE to maintain a constant drain current bias over the
dc supply variation, temperature, and part to part variations.
Constant drain current bias is an ideal method for reducing
time in calibration procedures and maintaining consistent
performance over time.
In comparison to a constant gate voltage bias, where the current
increases dynamically when the RF power is applied, a constant
drain current bias results in constant power consumption.
The OP1dB performance for the constant drain current bias
can be varied by varying the bias setpoint. By increasing the bias
current, OP1dB increases, as shown in Figure 66. The trade-off
with a constant drain current is that this higher drain current is
present for all RF input and output power levels.
The current and temperature limit of IDD under the constant
current operation is usually set by the thermal limitations
detailed in the Absolute Maximum Ratings section (see the
continuous power dissipation specification in Table 5).
Increasing IDD does not indefinitely increase OP1dB. Therefore,
consider the trade-off between the power dissipation and OP1dB
performance when using a constant drain current bias.
The performance of the constant drain current circuit is
summarized in Figure 60 to Figure 67. These figures include
comparisons with a constant gate voltage bias. Note that Figure 60
indicates a current consumption of 140 mA, which includes the
complete current consumption of the circuit, that is, 120 mA drain
current for the HMC1126ACEZ and an additional 20 mA of
quiescent current in the HMC920LP5E. Using 140 mA as the
current consumption also results in lower PAE compared to a
constant gate voltage bias.
180
80
110
160
140
90
120
100
130
170
150
–10
15
5
0
10
–5
INPUT POWER (dBm)
CONSTANT DRAIN CURRENT BIAS
CONSTANT GATE VOLTAGE BIAS
Figure 60. IDD vs. Input Power, VDD = 5 V, Frequency = 26 GHz, Constant Drain
Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias
22
20
0
6
16
12
2
8
4
10
18
14
–10
15
5
0
10
–5
INPUT POWER (dBm)
CONSTANT DRAIN CURRENT BIAS
CONSTANT GATE VOLTAGE BIAS
Figure 61. Output Power vs. Input Power, VDD = 5 V, Frequency = 26 GHz,
Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias
14
12
0
8
4
2
10
6
–10
15
5
0
10
–5
INPUT POWER (dBm)
CONSTANT DRAIN CURRENT BIAS
CONSTANT GATE VOLTAGE BIAS
Figure 62. PAE vs. Input Power, VDD = 5 V, Frequency = 26 GHz,
Constant Drain Current Bias (IDD = 140 mA) and Constant Gate Voltage Bias
22
20
0
4
8
12
16
18
2
6
10
14
2
30
14
22
10
38
26
34
18
6
FREQUENCY (GHz)
CONSTANT DRAIN CURRENT BIAS
CONSTANT GATE VOLTAGE BIAS
Figure 63. OP1dB vs. Frequency, VDD =5 V, Constant Drain Current Bias (IDD =
140 mA) and Constant Gate Voltage Bias



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