| 数据搜索系统,热门电子元器件搜索 |
|
STP45N60DM6 数据表(PDF) 6 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP45N60DM6 数据表(HTML) 6 Page - STMicroelectronics |
|
6 / 15 page ![]() Figure 7. Gate charge vs gate-source voltage GADG200720171438QVG 12 10 8 6 4 2 0 600 500 400 300 200 100 0 0 8 16 24 32 40 48 VGS (V) VDS (V) Qg (nC) VDS VDD = 480 V ID = 30 A Figure 8. Static drain-source on-resistance GADG270720171030RID 0.091 0.089 0.087 0.085 0.083 0.081 0.079 0 5 10 15 20 25 30 RDS(on) (Ω) ID (A) VGS = 10 V Figure 9. Capacitance variations GADG250720171026CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 10. Normalized gate threshold voltage vs temperature GADG200720171435VTH 1.1 1 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) Tj ( °C) ID = 250 µA Figure 11. Normalized on-resistance vs temperature GADG200720171435RON 2.5 2 1.5 1 0.5 0 -75 -25 25 75 125 RDS(on) (norm.) Tj ( °C) VGS = 10 V Figure 12. Normalized V(BR)DSS vs temperature GADG200720171436BDV 1.08 1.04 1 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) Tj ( °C) ID = 1 mA STP45N60DM6, STW45N60DM6 Electrical characteristics (curves) DS11664 - Rev 3 page 6/15 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |