| 数据搜索系统,热门电子元器件搜索 |
|
STP45N60DM6 数据表(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP45N60DM6 数据表(HTML) 1 Page - STMicroelectronics |
|
1 / 15 page ![]() 1 2 3 TO-247 1 2 3 TAB TO-220 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STP45N60DM6 600 V 0.099 Ω 30 A STW45N60DM6 • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status links STP45N60DM6 STW45N60DM6 Product summary Order code STP45N60DM6 Marking 45N60DM6 Package TO-220 Packing Tube Order code STW45N60DM6 Marking 45N60DM6 Package TO-247 Packing Tube N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages STP45N60DM6, STW45N60DM6 Datasheet DS11664 - Rev 3 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STP45N60DM6 |
|
类似说明 - STP45N60DM6 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |