STP45N60DM6 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STP45N60DM6

功能描述	N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM,(1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 30 A

1.6

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs,

VDD = 60 V (see )Figure 17. Test

circuit for inductive load switching

and diode recovery times

110

Qrr

Reverse recovery charge

0.5

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 30 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see )Figure 17. Test circuit for

inductive load switching and diode

recovery times

215

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STP45N60DM6, STW45N60DM6

Electrical characteristics

DS11664 - Rev 3

page 4/15

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