STTH30M06S datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

Figure 7. Reverse recovery charges versus dIF/dt (typical

values)

100

200

300

400

500

100

150

200

250

300

350

400

450

500

QRR(nC)

dIF/dt(A/µs)

R = 400 V

j = 125 °C

F = IF(AV)

Figure 8. Reverse recovery softness factor versus dIF/dt

(typical values)

0.0

0.2

0.4

0.6

0.8

100

150

200

250

300

350

400

450

500

dIF/dt(A/µs)

SFACTOR

IF = I

F(AV)

VR=400V

Tj=125°C

Figure 9. Relative variations of dynamic parameters

versus junction temperature

0.0

0.4

0.8

1.2

1.6

2.0

100

125

Tj(°C)

IF=IF(AV)

VR=400 V

Reference: Tj=125 °C

IRM

SFACTOR

QRR

Figure 10. Junction capacitance versus reverse voltage

applied (typical values)

100

1000

C(pF)

F = 1 MHz

osc= 30 mVRMS

j = 25 °C

VR(V)

Figure 11. Relative variation of non-repetitive peak

surge forward current versus pulse duration (sinusoidal

waveform)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.1

1.0

10.0

IFSM(tp) / IFSM(10ms)

tp(ms)

Figure 12. Relative variation of non-repetitive peak

surge forward current versus initial junction temperature

(sinusoidal waveform)

IFSM(Tj) / IFSM(25 °C)

Tj(°C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

STTH30M06S

Characteristics (curves)

DS13736 - Rev 2

page 5/10

STTH30M06S 数据表(PDF) 5 Page - STMicroelectronics

STTH30M06S 数据表(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

数据表下载