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STTH30M06S 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH30M06S
功能描述  600 V, 30 A ultrafast high voltage diode
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH30M06S 数据表(HTML) 4 Page - STMicroelectronics

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1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (square waveform)
0
10
20
30
40
50
60
70
80
90
100
110
0
8
16
24
32
40
PF(AV)(W)
IF(AV)(A)
= 0.05
= 0.2
= 0.1
= 0.
=1
T
=tp/T
tp
Figure 2. Forward voltage drop versus forward current
(typical values)
0.1
1.0
10.0
100.0
1000.0
0.0
1.0
2.0
3.0
4.0
5.0
T j = 25 °C
Tj = 150 °C
I
F(A)
V
F(V)
Figure 3. Forward voltage drop versus forward current
(maximum values)
0.1
1.0
10.0
100.0
1000.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
T j = 25 °C
Tj = 150 °C
I
F(A)
V
F(V)
Figure 4. Relative variation of thermal impedance,
junction to case versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-c) / Rth(j-c)
t
p(s)
TO-3PF
Single pulse
Figure 5. Peak reverse recovery current versus dIF/dt
(typical values)
0
4
8
12
16
0
50
100
150
200
250
300
350
400
450
500
I
RM(A)
V
R = 400 V
T
j = 125 °C
I
F = IF(AV)
dIF/dt(A/µs)
Figure 6. Reverse recovery time versus dIF/dt (typical
values)
0
30
60
90
120
0
50
100
150
200
250
300
350
400
450
500
trr (ns)
dIF/dt(A/µs)
V
R = 400 V
T
j = 125 °C
I
F = IF(AV)
STTH30M06S
Characteristics (curves)
DS13736 - Rev 2
page 4/10



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