STTH30M06S datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(AV)

Average forward current

δ = 0.5 square

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

170

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

+175

°C

Table 2. Thermal resistance parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Typ.

1.6

°C/W

Max.

2.3

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = 600 V

µA

Tj = 125 °C

800

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 15 A

2.1

Tj = 150 °C

1.3

Tj = 25 °C

IF = 30 A

2.6

3.8

Tj = 150 °C

1.7

2.3

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.1 x IF(AV) + 0.035 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4058: Calculation of turn-off power losses generated by an ultrafast diode

STTH30M06S

Characteristics

DS13736 - Rev 2

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