ST25TV02K datasheet(72/90 Pages) STMICROELECTRONICS

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Device parameters

8.1

Maximum ratings

Stressing the device above the ratings listed in Table 152. Absolute maximum ratings may permanently damage

it. These are stress ratings only and operation of the device, at these or any other conditions above those

indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect the device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 152. Absolute maximum ratings

Symbol

Parameter

Min. Max.

Unit

Ambient operating temperature

- 40 85

°C

TSTG

Storage temperature

UFDFPN5

-65

150

°C

Sawn wafer on UV tape kept in its original packing

form

°C

tSTG

Retain

9 (1)

months

VMAX_1 (2)

RF input voltage amplitude peak to peak between

AC0 and AC1, VSS pin left floating

VAC0 - VAC1

VESD

Electrostatic discharge voltage (3)(human body model) All pins

1500 V

1. Counted from ST production date.

2. Based on characterization, not tested in production.

3. ANSI/ESDA/JEDEC JS-001-2012, C = 100 pF, R = 1500 Ω, R2 = 500 Ω

8.2

RF electrical parameters

This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the

device in RF mode.

The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the

Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions

in their circuit match the measurement conditions when relying on the quoted parameters.

Table 153. RF characteristics

Symbol

Parameter

Condition(1)(2)

Min

Typ

Max

Unit

fCC

External RF signal frequency

13.553 13.56 13.567

MHz

MICARRIER

10% carrier modulation index (3)

100% carrier modulation index

100

tBoot_RF

RF Boot time (Minimum time from carrier generation to first data)

From H-field min

fSH

Subcarrier frequency high

FCC/32

423.75

kHz

fSL

Subcarrier frequency low

FCC/28

484.28

kHz

VICC response delay

318.6

320.9

323.3

µs

VCD new request delay

309

311.5

314

µs

VCD new request delay when no response is received from the

VICC

323.3

µs

Time for Write operation (including internal Verify) (4)

1 Block

5.2

ST25TV02K ST25TV512

Device parameters

DS12074 - Rev 11

page 72/90

ST25TV02K 数据表(PDF) 72 Page - STMicroelectronics

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