STM32F373C8 datasheet(56/137 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F373xx

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DocID022691 Rev 7

The following relationship must be respected between VREFSD+ and VDDSD12, VDDSD3:

VREFSD+ must be lower than VDDSD3.

Depending on the SDADCx operation mode, there can be more constraints between

VREFSD+, VDDSD12 and VDDSD3 which are described in reference manual RM0313.

Table 20. Current characteristics

Symbol

Ratings

Max.

Unit

ΣIVDD

Total current into sum of all VDD_x and VDDSDx power lines

(source)(1)

160

ΣIVSS

Total current out of sum of all VSS_x and VSSSD ground lines

(sink)(1)

-160

IVDD(PIN)

Maximum current into each VDD_x or VDDSDx power pin (source)(1)

100

IVSS(PIN)

Maximum current out of each VSS_x or VSSSD ground pin (sink)(1)

-100

IIO(PIN)

Output current sunk by any I/O and control pin

Output current source by any I/O and control pin

-25

ΣIIO(PIN)

Total output current sunk by sum of all IOs and control pins(2)

Total output current sourced by sum of all IOs and control pins(2)

-80

IINJ(PIN)

Injected current on FT, FTf and B pins(3)

-5/+0

Injected current on TC and RST pin(4)

± 5

Injected current on TTa pins(5)

± 5

ΣIINJ(PIN)

Total injected current (sum of all I/O and control pins)(6)

± 25

1. VDDSD12 is the external power supply for the PB2, PB10, and PE7 to PE15 I/O pins (the I/O pin ground is internally

connected to VSS). VDDSD3 is the external power supply for PB14 to PB15 and PD8 to PD15 I/O pins (the I/O pin ground

is internally connected to VSS). VDD (VDD_x) is the external power supply for all remaining I/O pins (the I/O pin ground is

internally connected to VSS).

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be

sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.

3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum

value.

4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be

exceeded. Refer to Table 19: Voltage characteristics for the maximum allowed input voltage values.

5. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be

exceeded. Refer also to Table 19: Voltage characteristics for the maximum allowed input voltage values. Negative injection

disturbs the analog performance of the device. See note (2) below Table 62.

6. When several inputs are submitted to a current injection, the maximum

ΣIINJ(PIN) is the absolute sum of the positive and

negative injected currents (instantaneous values).

Table 21. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

–65 to +150

°C

Maximum junction temperature

150

°C

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