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STM32F373C8 数据表(PDF) 77 Page - STMicroelectronics |
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STM32F373C8 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 137 page ![]() DocID022691 Rev 7 77/137 STM32F373xx Electrical characteristics 114 Figure 15. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.8 Internal clock source characteristics The parameters given in Table 42 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 22. The provided curves are characterization results, not tested in production. High-speed internal (HSI) RC oscillator Table 42. HSI oscillator characteristics(1) 1. VDDA =3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz TRIM HSI user trimming step - - - 1(2) 2. Guaranteed by design. % DuCy(HSI) Duty cycle - 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator (factory calibrated) TA = –40 to 105 °C –3.8(3) 3. Guaranteed by characterization results. -4.6(3) % TA = –10 to 85 °C –2.9(3) -2.9(3) % TA = 0 to 70 °C –2.3(3) -–2.2(3) % TA = 25 °C –1 - 1 % tsu(HSI) HSI oscillator startup time -1(3) -2(3) µs IDD(HSI) HSI oscillator power consumption - - 80 100(3) µA |
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