SIR184DP datasheet(4/13 Pages) VISHAY

4 / 13 page

SiR184DP

www.vishay.com

Vishay Siliconix

S17-1627-Rev. A, 23-Oct-17

Document Number: 76348

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

100

1000

10000

0.01

0.1

100

0.3

0.6

0.9

1.2

1.5

Axis Title

SD - Source-to-Drain Voltage (V)

2nd line

J = 150 °C

J = 25 °C

100

1000

10000

0.006

0.012

0.018

0.024

0.030

2468

Axis Title

GS - Gate-to-Source Voltage (V)

2nd line

J = 25 °C

D = 10 A

J = 125 °C

100

1000

10000

-1.4

-1.0

-0.6

-0.2

0.2

0.6

-50

-25

100

125

150

Axis Title

J - Temperature (°C)

2nd line

D = 250 μA

D = 5 mA

100

1000

10000

100

200

300

400

500

0.001

0.01

0.1

Axis Title

Time (s)

2nd line

100

1000

10000

0.01

0.1

100

1000

0.01

0.1

100

Axis Title

DS - Drain-to-Source Voltage (V)

(1) V

GS > minimum VGS at which RDS(on) is specified

IDM limited

Limited by

RDS(on) (1)

A = 25 °C

Single pulse

BVDSS limited

100 ms

10 ms

1 ms

100 μs

10s

ID limited

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