SIR184DP datasheet(1/13 Pages) VISHAY

部件名	SIR184DP

功能描述	N-Channel 60 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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SiR184DP

www.vishay.com

Vishay Siliconix

S17-1627-Rev. A, 23-Oct-17

1

Document Number: 76348

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET® Gen IV power MOSFET

• Very low RDS - Qg figure-of-merit (FOM)

• Tuned for the lowest RDS - Qoss FOM

• 100 % Rg and UIS tested

• Material

categorization:

for

definitions

of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• Primary side switch

•DC/DC converter

• Motor drive switch

• Battery and load switch

• Industrial

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

g. TC = 25 °C

PRODUCT SUMMARY

VDS (V)

60

RDS(on) max. () at VGS = 10 V

0.0058

RDS(on) max. () at VGS = 7.5 V

0.0070

Qg typ. (nC)

16

ID (A) a, g

73

Configuration

Single

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR184DP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

60

V

Gate-source voltage

VGS

± 20

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

73

A

TC = 70 °C

58.7

TA = 25 °C

20.7 b, c

TA = 70 °C

16.6 b, c

Pulsed drain current (t = 100 μs)

IDM

100

Continuous source-drain diode current

TC = 25 °C

IS

56.8

TA = 25 °C

4.5 b, c

Single pulse avalanche current

L = 0.1 mH

IAS

20

Single pulse avalanche energy

EAS

20

mJ

Maximum power dissipation

TC = 25 °C

PD

62.5

W

TC = 70 °C

40

TA = 25 °C

5.0

TA = 70 °C

3.2 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) c

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient b

t

 10 s

RthJA

20

25

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

1.6

2.0

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