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SIR184DP 数据表(PDF) 3 Page - Vishay Siliconix

部件名 SIR184DP
功能描述  N-Channel 60 V (D-S) MOSFET
PDF  13 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SIR184DP 数据表(HTML) 3 Page - Vishay Siliconix

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SiR184DP
www.vishay.com
Vishay Siliconix
S17-1627-Rev. A, 23-Oct-17
3
Document Number: 76348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
20
40
60
80
100
02468
10
V
DS - Drain-to-Source Voltage (V)
2nd line
V
GS = 10 V thru 6 V
V
GS = 4 V
V
GS = 5 V
V
GS = 3 V
10
100
1000
10000
0.0040
0.0046
0.0052
0.0058
0.0064
0.0070
0
1632486480
Axis Title
I
D - Drain Current (A)
2nd line
V
GS = 10 V
V
GS = 7.5 V
10
100
1000
10000
0
2
4
6
8
10
0
4.2
8.4
12.6
16.8
21
Axis Title
Q
g - Total Gate Charge (nC)
2nd line
V
DS = 15 V, 30 V, 45 V
I
D = 10 A
0
20
40
60
80
100
02468
10
V
GS - Gate-to-Source Voltage (V)
2nd line
T
C = 25 °C
T
C =-55 °C
T
C = 125 °C
10
100
1000
10000
0
400
800
1200
1600
2000
0
1224364860
Axis Title
V
DS - Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.6
0.9
1.2
1.5
1.8
2.1
-50
-25
0
25
50
75
100
125
150
Axis Title
T
J - Junction Temperature (°C)
2nd line
I
D = 10 A
V
GS = 7.5 V
V
GS = 10 V



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