MPC5602BAMLL4R datasheet(61/109 Pages) NXP

61 / 109 page

Package pinouts and signal descriptions

MPC5604B/C Microcontroller Data Sheet, Rev. 15

NXP Semiconductors

2.19.3

Start-up/Switch-off timings

2.20

Electromagnetic compatibility (EMC) characteristics

Susceptibility tests are performed on a sample basis during product characterization.

IFMOD

CC D Sum of the current consumption on

VDD_HV and VDD_BV on matrix

modification (program/erase)

Program/Erase ongoing while

reading code flash memory

registers fCPU =64 MHz

—15

Program/Erase ongoing while

reading data flash memory

registers fCPU =64 MHz

—15

IFLPW CC D Sum of the current consumption on

VDD_HV and VDD_BV

During code flash memory

low-power mode

——

900

µA

During data flash memory

low-power mode

——

900

IFPWD CC D Sum of the current consumption on

VDD_HV and VDD_BV

During code flash memory

power-down mode

——

150

µA

During data flash memory

power-down mode

——

150

1 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified

2 This value is only relative to the actual duration of the read cycle

3 f

CPU 64 MHz can be achieved only at up to 105 °C

Table 32. Start-up time/Switch-off time

Symbol

Parameter

Conditions1

1 V

DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified

Value

Unit

Min

Typ

Max

TFLARSTEXIT CC T Delay for Flash module to exit reset mode

Code Flash

—

125

µs

Data Flash

—

125

TFLALPEXIT

CC T Delay for Flash module to exit low-power

mode

Code Flash

—

0.5

Data Flash

—

0.5

TFLAPDEXIT

CC T Delay for Flash module to exit power-down

mode

Code Flash

—

Data Flash

—

TFLALPENTRY CC T Delay for Flash module to enter low-power

mode

Code Flash

—

0.5

Data Flash

—

0.5

TFLAPDENTRY CC T Delay for Flash module to enter power-down

mode

Code Flash

—

1.5

Data Flash

—

1.5

Table 31. Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions1

Value

Unit

Min

Typ

Max

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