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BLF978P 数据表(PDF) 5 Page - Ampleon Netherlands B.V.

部件名 BLF978P
功能描述  HF / VHF power LDMOS transistor
PDF  15 Pages
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制造商  AMPLEON [Ampleon Netherlands B.V.]
网页  https://www.ampleon.com
标志 AMPLEON - Ampleon Netherlands B.V.

BLF978P 数据表(HTML) 5 Page - Ampleon Netherlands B.V.

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BLF978P
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet
Rev. 1 — 3 April 2020
5 of 15
BLF978P
HF / VHF power LDMOS transistor
7.
Application information
VDS =50V; IDq =2  5 mA; f = 352 MHz; CW.
VDS =50V; IDq =2  50 mA; f = 352 MHz; CW pulsed
(tp = 100 s;  =10%).
Fig 3.
Power gain and drain efficiency on AR191160
as function of output power; typical values
Fig 4.
Power gain and drain efficiency on AR191160
as function of output power; typical values
VDS =45V; IDq =2  10 mA; f = 500 MHz; CW.
VDS =50V; IDq =2  10 mA; f = 650 MHz; CW.
Fig 5.
Power gain and drain efficiency on AR191195
as function of output power; typical values
Fig 6.
Power gain and drain efficiency on AR201049
as function of output power; typical values
amp01412
0
200
400
600
800
1000
1200
21
20
22
30
23
40
24
50
25
60
26
70
27
80
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
(%)
Gp
Gp
ηD
ηD
amp01413
0
200
400
600
800
1000
1200
1400
23
10
24
30
25
50
26
70
27
90
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
(%)
Gp
Gp
ηD
ηD
amp01414
0
200
400
600
800
1000
19
30
20
40
21
50
22
60
23
70
24
80
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
(%)
Gp
Gp
ηD
ηD
amp01415
0
200
400
600
800
1000
1200
18
30
19
40
20
50
21
60
22
70
PL (W)
Gp
Gp
(dB)
(dB)
(dB)
ηD
ηD
(%)
(%)
(%)
Gp
Gp
ηD
ηD



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