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BLF978P 数据表(PDF) 6 Page - Ampleon Netherlands B.V. |
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BLF978P 数据表(HTML) 6 Page - Ampleon Netherlands B.V. |
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6 / 15 page ![]() BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved. Product data sheet Rev. 1 — 3 April 2020 6 of 15 BLF978P HF / VHF power LDMOS transistor 8. Test information 8.1 Ruggedness in class-AB operation The BLF978P is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS =50V; IDq = 50 mA per section; PL = 1200 W; f = 225 MHz; CW pulsed (tp =100 s; =10%). 8.2 Impedance information Fig 7. Definition of transistor impedance Table 9. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL =1200W. f Zi ZL (MHz) ( ) ( ) 225 1.1 j4.4 3.7 + j1.1 amp01314 gate 1 gate 2 drain 2 drain 1 ZL Zi |
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