TC6320

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Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate

"products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices

determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For

the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or

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Initial Release

N- and P-Channel Enhancement-Mode MOSFET Pair

Features

Integrated gate-source resistor

Integrated gate-source zener diode

Low threshold

Low on-resistance

Independent N- and P-channels

Electrically isolated N- and P-channels

Low input capacitance

Fast switching speeds

Free from secondary breakdowns

Low input and output leakage

Application

High voltage pulsers

Amplifiers

Buffers

Piezoelectric transducer drivers

General purpose line drivers

Logic level interfaces

Absolute Maximum Ratings*

Drain-to-Source Voltage

Drain-to-Gate Voltage

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

*Distance of 1.6mm from case for 10 seconds.

General Description

The Supertex TC6320TG consists of a high voltage low

threshold N-channel and P-channel MOSFET in an SO-8

package. Both MOSFETs have integrated gate-source

resistors and gate-source zener diode clamps which are

desired for high voltage pulser applications. TC6320TG, a

complementary high-speed, high voltage, gate-clamped

N- and P-channel MOSFET pair in a single SO-8

package. The TC6320TG offers 200V breakdown voltage,

2.0A output peak current and low input capacitance. The

2.0A output current capability will minimize rise and fall

times.

The

low

input

capacitance

will

minimize

propagation delay times and also rise and fall times. The

MOSFETs have integrated gate-source resistors and

gate-source zener diode clamps that are desired for high

voltage pulser applications saving board space and

improving performance. It is specifically designed for

applications in medical ultrasound transmitters and non-

destructive evaluation in materials flaw detection, but it

can also be used as an efficient buffer.

Package Option

S1

G1

S2

G2

D2

D2

D1

D1

SO-8 Package

(top view)

N-Channel

P-Channel

1

2

3

45

6

7

8