TC6320

________________________________________________________________________________

Supertex, Inc.

January 21, 2003

2

Order Number / Package

N-Channel

P-Channel

N-Channel

P-Channel

SO-8

200V

-200V

7.0

Ω

8.0

Ω

TC6320TG

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Drain-to-Source

Breakdown Voltage

200

V

Gate Threshold Voltage

1.0

2.0

V

-4.5

mV/°C

Gate-Source Shunt Resistor

10

50

K

Ω

TBD

%/°C

Gate-Source Zener Voltage

13.2

25

V

TBD

mV/°C

10

µA

Zero Gate Voltage Drain Current

1.0

mA

1.0

On-State Drain Current

2.0

A

8.0

Static Drain-to-Source

ON-State Resistance

7.0

Ω

1.0

%/°C

Forward Transconductance

400

mmho

Input Capacitance

110

Common Source Output Capacitance

60

Reverse Transfer Capacitance

23

pF

f=1MHz

Turn-ON Delay Time

10

Rise Time

15

Turn-Off Delay Time

20

Fall Time

15

ns

Ω

Diode Forward Voltage Drop

1.8

V

Reverse Recovery Time

300

ns

Notes:

1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)

2) All AC parameters sample tested.

N-Channel Switching Waveforms and Test Circuit

Input

Pulse

Generator

D.U.T

OUTPUT

10V

0V

0V

V

DD

Input

Output

10%

90%

90%

10%

90%

10%