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TC6320TG 数据表(PDF) 3 Page - Supertex, Inc |
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TC6320TG 数据表(HTML) 3 Page - Supertex, Inc |
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3 / 3 page ![]() TC6320 ________________________________________________________________________________ P-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage -200 V VGS=0V, ID=-2mA VGS(th) Gate Threshold Voltage -1.0 -2.4 V VGS=VDS, ID=-1mA ∆VGS(th) Change in VGS(th) with Temperature 4.5 mV/°C VGS=VDS, ID=-1mA RGS Gate-Source Shunt Resistor 10 50 K Ω IGS=-100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=-100µA VzGS Gate-Source Zener Voltage 13.2 25 V IGS=-2mA ∆VGS(th) Change in VzGS with Temperature TBD mV/°C IGS=-2mA -10 µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current -1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C -1.0 VGS=-4.5V, VDS=-25V ID(ON) On-State Drain Current -2.0 A VGS=-10V, VDS=-25V 10 VGS=-4.5V, ID=-150mA RDS(ON) Static Drain-to-Source ON-State Resistance 8.0 Ω VGS=-10V, ID=-1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=-10V, ID=-200mA GFS Forward Transconductance 400 mmho VDS=-25V, ID=-200mA CISS Input Capacitance 200 COSS Common Source Output Capacitance 55 CRSS Reverse Transfer Capacitance 30 pF VGS=0V, VDS=-25V f=1MHz td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-Off Delay Time 20 tf Fall Time 15 ns VDD=-25V, ID=-1.0A RGEN=25 Ω VSD Diode Forward Voltage Drop -1.8 V VGS=0V, ISD=-0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=-0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. P-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT 0V -10V 0V V DD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 90% 10% 90% 10% 10% 90% 1/22/03 |
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