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SWCS049A 数据表(PDF) 20 Page - Texas Instruments |
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SWCS049A 数据表(HTML) 20 Page - Texas Instruments |
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20 / 144 page  20 TPS65911 SWCS049S – JUNE 2010 – REVISED AUGUST 2018 www.ti.com Submit Documentation Feedback Product Folder Links: TPS65911 Specifications Copyright © 2010–2018, Texas Instruments Incorporated 5.13 Electrical Characteristics: VIO SMPS Over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input voltage on VCCIO and VCC7 (VIN) VOUT = 1.5 V, 1.8 V, or 2.5 V 2.7 5.5 V VOUT = 3.3 V VOUT 5.5 DC output voltage (VOUT) PWM mode (VIO_PSKIP = 0) or pulse skip mode IOUT = 0 to IMAX VSEL= 00 –3% 1.5 3% V VSEL = 01 –3% 1.8 3% VSEL = 10 –3% 2.5 3% VSEL = 11 –3% 3.3 3% Power down 0 Rated output current (IOUTmax) ILMAX[1:0] =11 VIO output voltage = 1.5 V 1300 mA VIO output voltage = 1.8 V 1200 VIO output voltage = 2.5 V 1100 VIO output voltage = 3.3 V 1100 P-channel MOSFET VIN = VINmin 300 mΩ On-resistance (RDS(ON)_PMOS) VIN = 3.8 V 250 400 P-channel leakage current (ILK_PMOS) VIN = VINMAX, SWIO = 0 V 2 µA N-channel MOSFET On-resistance (RDS(ON)_NMOS) VIN = VMIN 300 mΩ VIN = 3.8 V 250 400 N-channel leakage current (ILK_NMOS) VIN = VINmax, SWIO = VINmax 2 µA PMOS current limit (high-side) Source current load, VIN = VINmin to VINmax ILMAX[1:0] = 00 650 mA ILMAX[1:0] = 01 1200 ILMAX[1:0] = 10 1700 NMOS current limit (low- side) Source current load VIN = VINmin to VINmax ILMAX[1:0] = 00 650 mA ILMAX[1:0] = 01 1200 ILMAX[1:0] = 10 1700 Sink current load VIN = VINmin to VINmax ILMAX[1:0] = 00 800 ILMAX[1:0] = 01 1200 ILMAX[1:0] = 10 1700 DC load regulation On mode, IOUT = 0 to IOUTmax 20 mV DC line regulation On mode, VIN = VINmin to VINmax at IOUT = IOUTmax 20 mV Transient load regulation VIN = 3.8 V, VOUT = 1.8 V IOUT = 0 to 500 mA, maximum slew = 100 mA/µs IOUT = 700 to 1200 mA, maximum slew = 100 mA/µs 50 mV Turnon time, ton IOUT = 200 mA 350 µs Overshoot SMPS turned on 3% Power-save mode ripple voltage PFM (Pulse skip mode) mode, IOUT = 1 mA 0.025 × VOUT VPP Switching frequency 2.7 3 3.3 MHz Duty cycle 100% Minimum on time (TON(MIN)) P-channel MOSFET 35 ns Discharge resistor for power-down sequence (RDIS) 30 50 Ω VFBIO internal resistance 0.5 1 MΩ |
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