C2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Drain

3

Source (bottom side)

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF5L05950CF2(1)

108 MHz

50 V

2000 W

20 dB

76%

1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected

in push-pull.

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

30-88 MHz/136-174 MHz ground communication

•

1.6-30 MHz HF transceiver

•

Plasma generator

•

Particle accelerator

•

FM and VHF TV broadcast

Description

The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET,

designed for wideband commercial and industrial applications in the frequency range

from HF to 500 MHz. It can be used for both CW and pulse application. It is featured

for high power and high ruggedness, suitable for industrial, scientific and medical

application, as well as FM radio, VHF TV and aerospace applications.

Product status link

RF5L05950CF2

Product summary

Order code

RF5L05950CF2

Marking

5L05950

Package

C2

Packing

Tape and reel 13"

Base/bulk quantity

100/100

950 W, 50 V, HF to 500 MHz RF power LDMOS transistor

RF5L05950CF2

Datasheet

DS13747 - Rev 2 - December 2021

For further information contact your local STMicroelectronics sales office.

www.st.com