2

Electrical characteristics

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 μA

110

-

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 50 V

-

1

μA

VGS = 0 V, VDS = 90 V

-

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate threshold voltage

VDS = 50 V, ID = 600 µA

2.3

-

2.9

V

VGS(Q)

Gate quiescent voltage

VDS = 50 V, ID = 230 mA

2

-

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 6 A

-

1

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

-

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

-

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f = 108 MHz, pulsed CW,

3 dB compression

-

2000

W

GPS

Power gain

-

20

dB

ηD

Drain efficiency

-

76

%

VSWR

Load mismatch

POUT = 2000 W, all phases

-

10:1

Note:

1.

VDD = 50 V, IDQ = 200 mA, pulse width = 100 μs, duty cycle = 10%.

2.

Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull.

RF5L05950CF2

Electrical characteristics

DS13747 - Rev 2

page 3/12