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RF5L05950CF2 数据表(PDF) 4 Page - STMicroelectronics |
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RF5L05950CF2 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() 3 Typical performances Figure 1. Power gain and drain efficiency vs output power (f = 108 MHz) 30 35 40 45 50 55 60 65 70 75 80 15 16 17 18 19 20 21 22 23 24 25 54 55 56 57 58 59 60 61 62 63 64 POUT (dbm) GPS ηD GADG221220210931GT Note: 1. VDD = 50 V, IDQ = 200 mA, pulse width = 100 μs, duty cycle = 10%. 2. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull. RF5L05950CF2 Typical performances DS13747 - Rev 2 page 4/12 |
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