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STGAP2SICS 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGAP2SICS
功能描述  Galvanically isolated 4 A single gate driver for SiC MOSFETs
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2SICS 数据表(HTML) 7 Page - STMicroelectronics

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5
Isolation
Table 6. Isolation and safety-related specifications
Parameter
Symbol
Value
Unit
Conditions
Clearance (Minimum External Air
Gap)
CLR
8
mm
Measured from input terminals to output terminals,
shortest distance through air
Creepage (*)
(Minimum External Tracking)
CPG
8
mm
Measured from input terminals to output terminals,
shortest distance path along body
Comparative Tracking
Index (Tracking Resistance)
CTI
≥ 400
V
DIN IEC 112/VDE 0303 Part 1
Isolation Group
-
II
-
Material Group (DIN VDE 0110, 1/89, Table 1)
Table 7. Isolation characteristics
Parameter
Symbol
Test Conditions
Characteristic
Unit
Maximum Working Isolation Voltage
VIORM
-
1200
VPEAK
Input to Output test voltage
In accordance with VDE 0884-11
VPR
Method a, Type test
1920
VPEAK
VPR = VIORM ×1.6, tm = 10 s
Partial discharge < 5 pC
Method b1, 100 % Production test
2250
VPEAK
VPR = VIORM×1.875, tm = 1 s
Partial discharge < 5 pC
Transient Overvoltage (Highest
Allowable Overvoltage)
VIOTM
tini = 60 s Type test
6000
VPEAK
Maximum Surge TestVoltage
VIOSM
Type test
6000
VPEAK
Isolation Resistance
RIO
VIO = 500 V; Type test
>109
Table 8. Isolation voltage as per UL 1577
Parameter
Symbol
Characteristic
Unit
Isolation Withstand Voltage, 1min (Type test)
VISO
3535/5000
VRMS/VPEAK
Isolation TestVoltage, 1sec (100% production)
VISOtest
4242/6000
VRMS/VPEAK
Recognized under the UL 1577 Component Recognition Program - file number E362869
STGAP2SICS
Isolation
DS13402 - Rev 4
page 7/22



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