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STGAP2SICS 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGAP2SICS
功能描述  Galvanically isolated 4 A single gate driver for SiC MOSFETs
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2SICS 数据表(HTML) 4 Page - STMicroelectronics

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3
Electrical data
3.1
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Test
condition
Min.
Max.
Unit
VDD
Logic supply voltage vs. GND
-
-0.3
6.5
V
VLOGIC Logic pins voltage vs. GND
-
-0.3
6.5
V
VH
Positive supply voltage (VH vs. GNDISO)
-
-0.3
28
V
VOUT
Voltage on gate driver outputs (GON, GOFF, CLAMP VS. GNDISO)
-
-0.3
VH+0.3
V
TJ
Junction temperature
-
-40
150
°C
TS
Storage temperature
-
-50
150
°C
ESD
HBM (human body model)
-
2
kV
3.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
Package
Value
Unit
Rth(JA)
Thermal resistance junction to ambient
SO-8W
120
°C/W
3.3
Recommended operating conditions
Table 4. Recommended operating conditions
Symbol
Parameter
Test conditions
Min.
Max.
Unit
VDD
Logic supply voltage vs. GND
-
3.1
5.5
V
VLOGIC
Logic pins voltage vs. GND
-
0
5.5
V
VH
Positive supply voltage (VH vs. GNDISO)
-
Max(VHON)
26
V
FSW
Maximum switching frequency(1)
-
-
1
MHz
tOUT
Output pulse width (GOUT, GON-GOFF)
-
100
-
ns
TJ
Operating Junction Temperature
-
-40
125
°C
1. Actual limit depends on power dissipation and TJ.
STGAP2SICS
Electrical data
DS13402 - Rev 4
page 4/22



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