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STGAP2SICS 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGAP2SICS
功能描述  Galvanically isolated 4 A single gate driver for SiC MOSFETs
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2SICS 数据表(HTML) 1 Page - STMicroelectronics

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Features
High voltage rail up to 1200 V
Driver current capability: 4 A sink/source @25°C
dV/dt transient immunity ±100 V/ns in full temperature range
Overall input-output propagation delay: 75 ns
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Temperature shut-down protection
Standby function
6 kV galvanic isolation
Wide body SO-8W package
UL 1577 recognized
Description
The STGAP2SICS is a single gate driver which provides galvanic isolation between
the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the
device also suitable for mid and high power applications such as power conversion
and motor driver inverters in industrial applications. The device is available in
two different configurations. The configuration with separated output pins allows
to independently optimize turn-on and turn-off by using dedicated gate resistors.
The configuration featuring single output pin and Miller CLAMP function prevents
gate spikes during fast commutations in half-bridge topologies. Both configurations
provide high flexibility and bill of material reduction for external components.
The device integrates protection functions: UVLO with optimized value for SiC
MOSFETs and thermal shut down are included to facilitate the design of highly
reliable systems. Dual input pins allow the selection of signal polarity control and
implementation of HW interlocking protection to avoid cross-conduction in case of
controller malfunction. The input to output propagation delay is less than 75 ns, which
delivers high PWM control accuracy. A standby mode is available to reduce idle
power consumption.
Product status link
STGAP2SICS
Product label
Galvanically isolated 4 A single gate driver for SiC MOSFETs
STGAP2SICS
Datasheet
DS13402 - Rev 4 - September 2022
For further information contact your local STMicroelectronics sales office.
www.st.com


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