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HVLED001B 数据表(PDF) 11 Page - STMicroelectronics

部件名 HVLED001B
功能描述  High power factor flyback controller with constant voltage primary-sensing and ultra-low standby consumption
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

HVLED001B 数据表(HTML) 11 Page - STMicroelectronics

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DS12748 Rev 2
11/33
HVLED001B
Electrical characteristics
33
IFBsnk
FB
FB pull-down current
Active mode,
VZCD,off = 3.2 V,
VFB = 1.65 V
1.3
1.9
2.5
mA
VBm
FB
Burst mode (1.5 ms)
threshold
Active mode(3)
0.97
1.054
1.11
V
VBm2
FB
Burst mode (4 ms)
threshold
Active mode(3)
0.86
0.9
0.94
V
Tbm
FB
Burst mode repetition
rate
VFB = 0.95 V
1.1
1.5
1.9
ms
Tbm2
FB
Burst mode repetition
rate
VFB = 0.75 V
3.2
4.0
4.8
ms
VOPP
FB,
OPTO
Over Power protection
threshold
Active mode(3)
2.8
-
-
V
TOPP
FB,
OPTO
Max. Active mode
duration after FBint
clamping
VFBint > VOPP(5)
75
100
125
ms
PSR function
VREF,PSR
FB
PSR loop reference
Tamb = 25 °C(6)
2.55
2.6
2.65
V
Over all temperature range(6) (7)
2.5
2.6
2.7
gm
FB
Transconductance
IFB = ± 10 A,
VFB = 1.65 V(7)
1.5
2.3
3
mS
Current sense input
VCS,lim
CS
Current sense
reference clamp
VHVSU = DC voltage,
VFB = VOPTO = 3.3 V(8)
700
750
810
mV
VCS,min
CS
Current sense minimum
level
30
55
80
mV
ICS
CS
Current sense pin bias
current
VCS = 500 mV(7)
-
2.5
3.5
μA
TLEB
CS
Leading edge blanking
140
340
470
ns
VOCP
CS
Saturation protection
threshold
During Ton(7)
1
1.1
1.2
V
TOCP
CS
Max. stop state duration
after OCP
tpulse = 1 μs, amplitude 2 V
0.75
1
1.25
ms
ZCD input
VZCD,arm
ZCD ZCD arming threshold
After Tblank,min(6)
0.23
0.3
0.38
V
VZCD,trig
ZCD
ZCD triggering
threshold
Negative going edge(6)
0.14
0.2
0.26
V
TBLANK,min
ZCD ZCD min. blanking time From MOS turn-off
1.3
1.75
2.5
μs
TBLANK,var
ZCD
ZCD programmable
blanking time
VTOFF = 0 V(9), from 1st ZCD trig
after TBLANK,min
55
80
115
μs
Table 6. Electrical characteristics (continued)
Symbol
Pin
Parameter
Test condition
Min.
Typ.
Max. Unit



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